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RAMAN ANALYSIS ON NANOCRYSTALLINE SILICON FILM

Min Gyu Park, Se-Bum Choi, Nam Woon Kim, Hyunung Yu
  • Abstract:
    A compact dot marker using a cw laser on a microcrystalline silicon (µc-Si:H) thin film is demonstrated. Annealing process using a laser leads to a continuous crystallization from nano to sub-micron domain (> 50 nm) of Si nanocrystals within the thin film. This patterning is quite useful because we can manipulate 2-D process of silicon structural forms for an efficient thin-film transistor (TFT) devices with respect to uniform electron mobility. A Raman microscope is quite useful to reveal a crystal volume fraction with a calculation from the population ratio between crystalline and amorphous phase.
  • Keywords:
    laser, fluence, silicon film, Raman crystallinity
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  • DOI:
    _unreg_wc-2012.SS2-P6

Event details:

  • IMEKO TC:
  • Event name:
    XX IMEKO World Congress
  • Title:

    Metrology for Green Growth

  • Place:
    Busan, REPUBLIC of KOREA
  • Time:
    09 September 2012 - 12 September 2012