MEASUREMENT OF PATTERNED WAFER SURFACE DEFECTS USING ANNULAR EVANESCENT LIGHT ILLUMINATION METHOD

• Abstract:

  To detect particulate defects on patterned wafers of below 100 nm design rule, we proposed a new detection method using evanescent light illumination. To verify the feasibility of the method, we performed fundamental experiments. The results show that particle with a size of 170 nm on the patterned wafer surface with about 400 nm pitch is detected.
• Keywords:

  near field optics, wafer inspection, nanomeasurements
• Download:

  PWC-2006-TC2-001u.pdf
• DOI:

  _unreg_wc-2006.TC2-001

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