GIANT MAGNETORESISTIVE EFFECT IN NON-MAGNETIC SILICON

• Abstract:

  We report that a simple device, based on a lightly doped silicon substrate contacted with two indium contacts, shows a positive magnetoresistance over 1,000 per cent for magnetic fields between 0 and 1 T at low temperature of 3 K. Current-voltage characteristics exhibit a nonlinear behavior, which is highly sensitive to temperature and magnetic field. Since our device is based on a conventional silicon platform and is highly sensitive to low magnetic field, it could be used to develop new devices of silicon-based magnetoelectronics.
• Keywords:

  magnetoresistance, silicon
• Download:

  IMEKO-WC-2012-TC4-P17.pdf
• DOI:

  _unreg_wc-2012.TC4-P17

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