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A NEW METHOD OF MEASUREMENT OF THE THERMAL RESISTANCE OF THE SILICON P-N DIODES

Janusz Zarębski, Krzysztof Górecki
  • Abstract:
    This paper deals with the problem of measuring the thermal resistance of silicon p-n diodes. The values of this parameter given in the catalogues rarely correspond to the real conditions of device cooling, e.g. the diode operating on the heat-sink. Therefore, the value of the thermal resistance has to be obtained from measurements. In the paper a new comfortable method of the measurement of the thermal resistance of silicon p-n diodes, based on measurements of their d.c. current-voltage characteristic and the estimation of the model parameter values with the use of PARTS-software, is presented. The results of measurements obtained by the new method are compared to the standard pulse method.
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  • DOI:
    _unreg_tc4-2004.002

Event details:

  • IMEKO TC:
    TC4
  • Event name:
    TC4 Symposium 2004
  • Title:
    XIII IMEKO TC4 International Symposium on Measurements for Research and Industrial Applications (together with IXth International Workshop on ADC Modeling and Testing, IWADC)
  • Place:
    Athens, GREECE
  • Time:
    29 September 2004 - 01 October 2004